NTD5867NL-1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTD5867NL-1G
Datasheet:
Description:
MOSFETs I-Pak Through Hole N-Channel number of channels:1 36 W 60 V Continuous Drain Current (ID):20 A
| Parameter | Value |
|---|---|
| Length | 6.73 mm |
| Width | 2.38 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 4 |
| Height | 7.62 mm |
| Packaging | Tube |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Obsolete (Last Updated: 5 months ago) |
| Max Power Dissipation | 36 W |
| Power Dissipation | 36 W |
| Threshold Voltage | 1.8 V |
| Number of Channels | 1 |
| Input capacitance | 675 pF |
| Continuous Drain Current (ID) | 20 A |
| Rds On Max | 39 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 6.5 ns |
| Turn-Off Delay Time | 18.2 ns |
| Element Configuration | Single |
| Rise Time | 12.6 ns |
| Drain to Source Resistance | 39 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Manufacturer Lifecycle Status | OBSOLETE (Last Updated: 5 months ago) |
| FET Type(Transistor Polarity) | N-Channel |
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